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november 2015 docid027978 rev 2 1 / 15 this is information on a product in full production. www.st.com STB80N4F6AG automotive - grade n - channel 40 v, 5.5 m typ.,80 a stripfet? f6 power mosfet in a d2pak package datasheet - production data figure 1 : internal schematic diagram features order code v ds r ds(on) max. i d STB80N4F6AG 40 v 6 m 80 a ? designed for automotive applications and aec - q101 qualified ? very low on - resistance ? very low gate charge ? high avalanche ruggedness ? low gate drive power loss applications ? switching applications description this device is an n - channel power mosfet developed using the stripfet? f6 technology with a new trench gate structure. the resulting power mosfet exhibits very low r ds(on) in all packages. table 1: de vice summary order code marking package packaging STB80N4F6AG 80n4f6 d2pak tape and reel am01475v1_ t ab d(2, t ab) g(1) s(3) 1 3 tab d 2 pak
contents STB80N4F6AG 2 / 15 docid027978 rev 2 contents 1 electrical ratings ................................ ................................ ............. 3 2 electrical characteristics ................................ ................................ 4 2.1 electrical characteristics (curves) ................................ ...................... 6 3 test circuits ................................ ................................ ..................... 8 4 package mechanical data ................................ ............................... 9 4.1 d2pak package information ................................ .............................. 9 4.2 d2pak packing infor mation ................................ ............................. 12 5 revision history ................................ ................................ ............ 14
STB80N4F6AG electrical ratings docid027978 rev 2 3 / 15 1 electrical ratings table 2: absolute maximum ratings symbol parameter value unit v ds drain - source voltage 40 v v gs gate - source voltage 20 v i d drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 56 a i dm (1) drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 70 w i av avalanche current, repetitive or not - repetitive (pulse width limited by t j max) 40 a e as single pulse avalanche energy(starting t j = 25 c, = i d =i av, v dd = 25 v) 149 mj t stg storage temperature - 55 to 175 c t j max. operating junction temperature 175 c notes: (1) pulse width limited by safe operating area. table 3: thermal data symbol parameter value unit r thj - case thermal resistance junction - case max. 2.14 c/w r thj - pcb (1) thermal resistance junction - ambient max. 35 c/w notes: (1) when mounted on fr - 4 board of inch2, 2 oz cu
electrical characteristics STB80N4F6AG 4 / 15 docid027978 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified). table 4: on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain - source breakdown voltage v gs = 0 v, i d = 250 a 40 v i dss zero gate voltage drain current (v gs = 0v) v ds = 40 v 1 a v ds = 40 v tj = 125 c 100 a i gss gate - body leakage current ( v ds = 0 v ) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain - source on - resistance v gs = 10 v, i d = 40 a 5.5 6 m table 5: dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 v - 2150 - pf c oss output capacitance - 335 - pf c rss reverse transfer capacitance - 160 - pf q g total gate charge v dd = 20 v, i d = 80 a, v gs = 10 v (see figure 14: "test circuit for gate charge behavior" ) - 36 - nc q gs gate - source charge - 11 - nc q gd gate - drain charge - 9 - nc table 6: switching times symbol parameter test conditions min. typ. max. unit t d(on) turn - on delay time v dd = 20 v, i d = 40 a r g = 4.7 , v gs = 10 v(see figure 15: "test circuit for inductive load switching and diode recovery times" ) - 10.5 - ns t r rise time - 7.6 - ns t d(off) turn - off - delay time - 46.1 - ns t f fall time - 11.9 - ns
STB80N4F6AG electrical characteristics docid027978 rev 2 5 / 15 table 7: source - drain diode symbol parameter test conditions min. typ. max. unit i sd source drain current 80 a i sdm (1) source - drain current (pulsed) 320 a v sd (2) forward on voltage i sd = 40 a, v gs = 0 v 1.3 v t rr reverse recovery time i sd = 80 a, di/dt = 100 a/s , v dd = 32 v (see figure 17: "unclamped inductive waveform" ) 41.1 ns q rr reverse recovery charge 43.6 nc i rrm reverse recovery current 2.1 a notes: (1) pulse width limited by safe operating area. (2) pulsed: pulse duration = 300 s, duty cycle 1.5%
electrical characteristics STB80N4F6AG 6 / 15 docid027978 rev 2 2.1 electrical characteristics (curves) figure 2 : safe operating area figure 3 : thermal impedance figure 4 : output characteristics figure 5 : transfer characteristics figure 6 : normalized gate threshold voltage vs. temperature figure 7 : normalized v(br)dss vs. temperature i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10ms 1ms 100s tj=175c t c=25c single pulse 100 id = 250 a gipd160620150918 r v gipd160609102015 r v 1 2 3 4 5 6 7 8 9 s v ds = 2v
STB80N4F6AG electrical characteristics docid027978 rev 2 7 / 15 figure 8 : static drain - source on - resistance figure 9 : normalized on - resistance vs. temperature figure 10 : gate charge vs. gate - source voltage figure 11 : capacitance variations figure 12 : source - drain diode forward characteristics (m)
test circuits STB80N4F6AG 8 / 15 docid027978 rev 2 3 test circuits figure 13 : test circuit for resistive load switching times figure 14 : test circuit for gate charge behavior figure 15 : test circuit for inductive load switching and diode recovery times figure 16 : unclamped inductive load test circuit figure 17 : unclamped inductive waveform figure 18 : switching time waveform
STB80N4F6AG package mechanical data docid027978 rev 2 9 / 15 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? speci fications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 d2pak package information figure 19 : d2pak (t o - 263) type a package outline 0079457_a_rev22
package mechani cal data STB80N4F6AG 10 / 15 docid027978 rev 2 table 8: d2pak (to - 263) type a package mechanical data dim. mm min. typ. max. a 4.40 4.60 a1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 d 8.95 9.35 d1 7.50 7.75 8.00 d2 1.10 1.30 1.50 e 10 10.40 e1 8.50 8.70 8.90 e2 6.85 7.05 7.25 e 2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l 2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r 0.4 v2 0 8
STB80N4F6AG package mechanical data docid027978 rev 2 11 / 15 figure 20 : d2pak (to - 263) recommended footprint (dimensions are in mm)
package mechanical data STB80N4F6AG 12 / 15 docid027978 rev 2 4.2 d2pak packing information figure 21 : tape outline
STB80N4F6AG package mechanical data docid027978 rev 2 13 / 15 figure 22 : reel outline table 9: d2pak tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base quantity 1000 p2 1.9 2.1 bulk quantity 1000 r 50 t 0.25 0.35 w 23.7 24.3
revision history STB80N4F6AG 14 / 15 docid027978 rev 2 5 revision history table 10: document revision history date revision changes 16 - jun - 2015 1 initial release 18 - nov - 2015 2 document status promoted from preliminary to production data. updated title and features in cover page.
STB80N4F6AG docid0279 78 rev 2 15 / 15 important notice C please read carefully stmicroelectronics nv and its subsidiaries (st) reserve the right to make changes, corrections, enhancements, modifications , and improvements to st products and/or to this document at any time without notice. purchasers s hould obtain the latest relevant information on st products before placing orders. st products are sold pursuant to sts terms and conditions of sale in place at the time of or der acknowledgement. purchasers are solely responsible for the choice, select ion, and use of st products and st assumes no liability for application assistance or the design of purchasers products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics C all rights reserved

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